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Technology Roadmap for NAND Flash Memory
Technology Roadmap for NAND Flash Memory
Introduction
Introduction
ITRS Technology Roadmap
ITRS Technology Roadmap
NAND Annual Technology Roadmaps
NAND Annual Technology Roadmaps
NAND Technology Quarterly Forecast
NAND Technology Quarterly Forecast
2013 NAND Production
2013 NAND Production
Micron Memory Roadmap
Micron Memory Roadmap
Micron 16 nm MLC NAND
Micron 16 nm MLC NAND
Micron 3D NAND Cell
Micron 3D NAND Cell
Samsung NAND Flash Roadmap
Samsung NAND Flash Roadmap
Samsung 3D V-NAND
Samsung 3D V-NAND
Samsung 3D V-NAND
Samsung 3D V-NAND
Samsung 3D V-NAND
Samsung 3D V-NAND
Sandisk NAND Memory Roadmap
Sandisk NAND Memory Roadmap
Sandisk 2D NAND Memory
Sandisk 2D NAND Memory
Sandisk BiCS 3D-NAND
Sandisk BiCS 3D-NAND
SK-Hynix NAND Roadmap
SK-Hynix NAND Roadmap
SK-Hynix 2D NAND Memory
SK-Hynix 2D NAND Memory
SK-Hynix MLC NAND Product Offerings
SK-Hynix MLC NAND Product Offerings
SK-Hynix 3D V-NAND
SK-Hynix 3D V-NAND
Glossary
Glossary

Презентация: «Technology Roadmap for NAND Flash Memory». Автор: Jason Choe. Файл: «Technology Roadmap for NAND Flash Memory.ppt». Размер zip-архива: 2462 КБ.

Technology Roadmap for NAND Flash Memory

содержание презентации «Technology Roadmap for NAND Flash Memory.ppt»
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1 Technology Roadmap for NAND Flash Memory

Technology Roadmap for NAND Flash Memory

April 2014

Content for re-use only with TechInsights permission.

2 Introduction

Introduction

NAND Flash is a rapidly changing technology and market. It promises to be very interesting as the process node approaches 10 nm. At this point, physical constraints will begin to limit the performance of the basic memory cell design. As a result, looking more than two years into the future becomes a purely speculative exercise and we limit our projections to 2016. Contact us for more information: http://www.techinsights.com/company/contact-us/ 1-613-599-6500

Content for re-use only with TechInsights permission.

3 ITRS Technology Roadmap

ITRS Technology Roadmap

Source: ITRS

Content for re-use only with TechInsights permission.

4 NAND Annual Technology Roadmaps

NAND Annual Technology Roadmaps

Manufacturer

2014

2015

2016

ITRS Flash Roadmap

17 nm

15 nm

14 nm

1X (19 nm) 1Y (16 nm) planar 3D-NAND (24L)

1Z (12 nm) planar 3D-NAND (32L)

1x nm 16 nm planar

3D-NAND

3D-NAND Gen 2

(1Y?) 15 nm planar 1Z 15 nm

1Z 3D-NAND (BiCS)

3D-NAND (BiCS)

16 nm planar

3D-NAND?

3D-NAND

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5 NAND Technology Quarterly Forecast

NAND Technology Quarterly Forecast

Content for re-use only with TechInsights permission.

6 2013 NAND Production

2013 NAND Production

Source: http://en.chinaflashmarket.com/Uploads/file/2013%20NAND%20Flash%20market%20annual%20report.pdf

Content for re-use only with TechInsights permission.

7 Micron Memory Roadmap

Micron Memory Roadmap

Source: http://www.enterprisetech.com/2014/02/20/micron-pushes-memory-roadmap-several-routes/

Content for re-use only with TechInsights permission.

8 Micron 16 nm MLC NAND

Micron 16 nm MLC NAND

Our 16 nm NAND technology enables the industry’s smallest 128Gb MLC Flash memory device. The 16 nm node is not only the leading Flash process, but it is also the most advanced processing node for any sampling semiconductor device.

Micron plans to make the transition from 2D NAND flash to 3D NAND flash when it's more cost effective. Because Micron already has a good scaling path for 2D NAND flash, it needs to add a lot of layers to 3D NAND flash before it makes economic sense to change over, so it is pursuing both formats in parallel.

Source: http://www.micron.com/about/innovations/process-tech Source: http://www.theinquirer.net/inquirer/feature/2286446/micron-bets-on-3d-nand-flash-for-the-future-of-storage

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9 Micron 3D NAND Cell

Micron 3D NAND Cell

Micron customers won't have to wait long for 3D flash memory CEO Mark Durcan tells CNET that the company will start providing samples of the advanced memory technology to customers in the first quarter of 2014.

Source: http://www.cnet.com/news/micron-customers-wont-have-to-wait-long-for-3d-flash-memory/

Source: Akira Goda “Opportunities and Challenges of 3D NAND Scaling” International Symposium VLSI Technology, Systems, and Applications (VLSI-TSA), 2013

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10 Samsung NAND Flash Roadmap

Samsung NAND Flash Roadmap

Source: http://www.anandtech.com/show/7237/samsungs-vnand-hitting-the-reset-button-on-nand-scaling

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11 Samsung 3D V-NAND

Samsung 3D V-NAND

Samsung's three-dimensional V-NAND (Vertical NAND) flash memory is fabricated using an innovative vertical interconnect process technology to link the 24-layer 3D cell array based on Samsung's 3D Charge Trap Flash (CTF) structure.

In Samsung's CTF-based NAND flash architecture, first developed in 2006, an electric charge is temporarily placed in a holding chamber of a non-conductive layer of flash composed of silicon nitride (SiN), instead of using a floating gate, to mitigate interference between neighbouring cells. By making this CTF layer three-dimensional, the reliability and processing speed of our V-NAND has been significantly improved. Furthermore, by applying both of these technologies, Samsung's 3D V-NAND is able to provide over twice the scaling of 20 nm-class planar NAND flash.

Source: http://www.samsung.com/global/business/semiconductor/html/product/flash-solution/vnand/overview.html

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12 Samsung 3D V-NAND

Samsung 3D V-NAND

Source: http://www.anandtech.com/show/7237/samsungs-vnand-hitting-the-reset-button-on-nand-scaling

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13 Samsung 3D V-NAND

Samsung 3D V-NAND

Source: Ki-Tae Park et al. “Three-Dimensional 128Gb MLC Veritical NAND Flash-Memory with 24-WL Stacked Layers and 50MB/s High-Speed Programming Solid-State Circuits Conference Digest of Technical Papers (ISSCC) 2014 pp334-335

Content for re-use only with TechInsights permission.

14 Sandisk NAND Memory Roadmap

Sandisk NAND Memory Roadmap

Content for re-use only with TechInsights permission.

Source: http://www.flashmemorysummit.com/English/Collaterals/Proceedings/2013/20130813_Plenary_Shrivastava.pdf

15 Sandisk 2D NAND Memory

Sandisk 2D NAND Memory

”One of our goals is to extend the life of 2D NAND technologies as far as possible because it reflects the huge investment that we have made in fabs and the technology, over the number of years,” said Shrivastava. “Of course, 3D NAND is extremely important and when it becomes cost-effective then it will move into production.” Sandisk plans to start producing its 3D NAND chips in 2016. “We are travelling in what we think is the lowest cost path in every technology generation, going from 19 nm to 1Y where we at the limit with lithography, and then we will scale to 1Z, which is our next-generation 2D NAND technology. We believe that this scaling path gives us the lowest cost structure in each of the nodes and in terms of cumulative investment.”

Source: http://www.flashmemorysummit.com/English/Collaterals/Proceedings/2013/20130813_Plenary_Shrivastava.pdf Ritu Shrivastava, Vice President Technology Development, at Sandisk Corporation

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16 Sandisk BiCS 3D-NAND

Sandisk BiCS 3D-NAND

Source: http://www.flashmemorysummit.com/English/Collaterals/Proceedings/2013/20130813_Plenary_Shrivastava.pdf

Content for re-use only with TechInsights permission.

17 SK-Hynix NAND Roadmap

SK-Hynix NAND Roadmap

Source: 2013SK_hynix_en_1.pdf www.skhynix.com/en/sustainable/sustain/report.jsp?

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18 SK-Hynix 2D NAND Memory

SK-Hynix 2D NAND Memory

SK Hynix Inc. announced that it has started full-scale mass production of 16 nm 64 Gb (Gigabit) MLC (Multi Level Cell) NAND Flash, which uses the industry's thinnest process technology. (Nov.20 20013)

We expect Hynix will develop 3D vertical fabrication technology by year-end or early next year and determine commercial production timing later. Given very low presence in the SSD market, unlike other NAND makers, Hynix’s priority in R&D and product development will be on enhancing competitive in house controller capability to set up a more sustainable product portfolio, according to the company.

Source: http://www.techpowerup.com/194824/sk-hynix-started-full-scale-mass-production-of-16-nm-nand-flash.htm Source: Global Memory Sector Citi Research Equities 26 Sept 2013 http://pg.jrj.com.cn/acc/Res/CN_RES/INDUS/2013/9/27/2b21dda8-af3a-4861-8b9e-69ad4e9efd5e.pdfl

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19 SK-Hynix MLC NAND Product Offerings

SK-Hynix MLC NAND Product Offerings

Source: SK-Hynix

Content for re-use only with TechInsights permission.

20 SK-Hynix 3D V-NAND

SK-Hynix 3D V-NAND

Source: http://thememoryguy.com/3d-nand-who-will-make-it-and-when/

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21 Glossary

Glossary

BiCS- pipe-shaped Bit Cost Scalable flash. A 3D NAND cell being developed by Toshiba. eMMC- Embedded Multimedia Card. A 1997 standard combining NAND Flash and Controller. HKMG- High K Metal Gate. An advance technology designed to replace silicon dioxide at small process nodes. ITRS- International Technology Roadmap for Semiconductors. MLC- Multilevel Cell. A NAND memory cell that stores more than one bit of information. TCAT- Terabit Array Transistor. A 3D NAND cell architecture. TLC- Triple Level Cell. A NAND memory cell that stores three bits of information.

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